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Output-capacitorless segmented low-dropout voltage regulator with controlled pass transistors

机译:具有受控传输晶体管的输出无电容分段低压差稳压器

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摘要

This article presents a low quiescent current output-capacitorless quasi-digital complementary metal-oxide-semiconductor (CMOS) low-dropout (LDO) voltage regulator with controlled pass transistors according to load demands. The pass transistor of the LDO is segmented into two smaller sizes based on a proposed segmentation criterion, which considers the maximum output voltage transient variations due to the load transient to different load current steps to find the suitable current boundary for segmentation. This criterion shows that low load conditions will cause more output variations and settling time if the pass transistor is used in its maximum size. Furthermore, this situation is the worst case for stability requirements of the LDO. Therefore, using one smaller transistor for low load currents and another one larger for higher currents, a proper trade-off between output variations, complexity, and power dissipation is achieved. The proposed LDO regulator has been designed and post-simulated in HSPICE in a 0.18¿µm CMOS process to supply a stable load current between 0 and 100¿mA with a 40¿pF on-chip output capacitor, while consuming 4.8¿µA quiescent current. The dropout voltage of the LDO is set to 200¿mV for 1.8¿V input voltage. The results reveal an improvement of approximately 53% and 25% on the output voltage variations and settling time, respectively.
机译:本文提出了一种低静态电流输出,无电容器的准数字互补金属氧化物半导体(CMOS)低压降(LDO)稳压器,该稳压器具有根据负载需求控制的传输晶体管。根据提议的分段标准,LDO的传输晶体管被分段为两个较小的尺寸,该分段标准考虑了由于不同负载电流阶跃下的负载瞬变而导致的最大输出电压瞬变变化,从而找到了用于分段的合适电流边界。该标准表明,如果使用最大尺寸的传输晶体管,则低负载条件将导致更多的输出变化和建立时间。此外,这种情况对于LDO的稳定性要求来说是最坏的情况。因此,将一个较小的晶体管用于低负载电流,将另一个较大的晶体管用于较高电流,则可以在输出变化,复杂度和功耗之间进行适当的权衡。拟议的LDO稳压器已在HSPICE中以0.18 µm CMOS工艺进行设计和后仿真,以通过40 µp片上输出电容器提供0至100 µmA的稳定负载电流,同时消耗4.8 µA的静态电流。 。对于1.8?V输入电压,LDO的压差电压设置为200?mV。结果表明,输出电压变化和建立时间分别提高了约53%和25%。

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